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? irf1407spbf irf1407lpbf v dss 75v r ds(on) 0.0078 ?? i d 100a ? description advanced hexfet? power mo sfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switch ing speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d2pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d2pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf1407l) is available for low-profile applications. 1 2016-5-26 ? symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 100? a i d @ t c = 100c continuous drain current, v gs @ 10v ? 70? i dm pulsed drain current ?? 520 p d @t a = 25c maximum power dissipation 3.8 w p d @t c = 25c maximum power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ?? 390 mj i ar avalanche current ? see fig.15,16, 12a, 12b a e ar repetitive avalanche energy ? mj dv/dt peak diode recovery dv/dt ?? 4.6 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) ? absolute maximum ratings thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ??? 0.75 c/w r ? ja junction-to-ambient ( pcb mount, steady state) ? ??? 40 d2 pak irf1407spbf g d s gate drain source benefits ? advanced process technology ? ultra low on-resistance ? dynamic dv/dt rating ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free s d g s d g d to-262 pak irf1407lpbf base part number package type standard pack form quantity irf1407lpbf to-262 tube 50 irf1407lpbf ( obsolete) irf1407spbf d2-pak tape and reel left 800 IRF1407STRLPBF orderable part number hexfet ? power mosfet
? irf1407s/lpbf 2 2016-5-26 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? starting t j = 25c, l = 0.13mh, r g = 25 ? , i as = 78a, v gs =10v. (see fig. 12) ? i sd ?? 78a, di/dt ?? 320a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 400s; duty cycle ? 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. ? limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ? uses irf1407 data and test conditions. ?? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.09 ??? v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? ??? 0.0078 ??? v gs = 10v, i d = 78a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a gfs forward trans conductance 74 ??? ??? s v ds = 25v, i d = 78a ? i dss drain-to-source leakage current ??? ??? 20 a v ds =75 v, v gs = 0v ??? ??? 250 v ds = 60v,v gs = 0v,t j =150c i gss gate-to-source forward leakage ??? ??? 200 na v gs = 20v gate-to-source reverse leakage ??? -200 v gs = -20v q g total gate charge ??? 160 250 nc ? i d = 78a q gs gate-to-source charge ??? 35 52 v ds = 60v q gd gate-to-drain charge ??? 54 81 v gs = 10v ?? t d(on) turn-on delay time ??? 11 ??? ns v dd = 38v t r rise time ??? 150 ??? i d =78a t d(off) turn-off delay time ??? 150 ??? r g = 2.5 ?? t f fall time ??? 140 ??? v gs = 10v ?? l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 5600 ??? pf ? v gs = 0v c oss output capacitance ??? 890 ??? v ds = 25v c rss reverse transfer capacitance ??? 190 ??? ? = 1.0khz, see fig. 5 ? c oss output capacitance ??? 5800 ??? v gs = 0v, v ds = 1.0v ? = 1.0khz c oss output capacitance ??? 560 ??? v gs = 0v, v ds = 60v ? = 1.0khz c oss eff. effective output capacitance ??? 1100 ??? v gs = 0v, v ds = 0v to 60v source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 520 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 78a,v gs = 0v ??? t rr reverse recovery time ??? 110 170 ns t j = 25c ,i f = 78a q rr reverse recovery charge ??? 390 590 nc di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? irf1407s/lpbf 3 2016-5-26 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 3.0 5.0 7.0 9.0 11.0 13.0 v gs , gate-to-source voltage (v) 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 175c v ds = 25v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 130a
? irf1407s/lpbf 4 2016-5-26 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 40 80 120 160 200 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 78a v = 15v ds v = 37v ds v = 60v ds 0.0 1.0 2.0 3.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v
? irf1407s/lpbf 5 2016-5-26 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 si ngle pulse (thermal response)
? irf1407s/lpbf 6 2016-5-26 ? fig 14. threshold voltage vs. temperature fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 13b. gate charge test circuit fig 13a. gate charge waveform -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 175 0 130 260 390 520 650 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 32a 55a 78a
? irf1407s/lpbf 7 2016-5-26 ? fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 16. maximum avalanche energy vs. temperature 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 78a
? irf1407s/lpbf 8 2016-5-26 ? fig 17. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? irf1407s/lpbf 9 2016-5-26 ? note: for the most current drawing please refer to infineon?s web site www.infineon.com d2-pak (to-263ab) part marking information d2-pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code
? irf1407s/lpbf 10 2016-5-26 to-262 part marking information to-262 package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to infineon?s web site www.infineon.com logo recti fi er international lot code assembly logo recti fi er international date code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = designates lead-free example: this is an irl3103l lot code 1789 assembly part number date code week 19 line c lot code year 7 = 1997 assembled on ww 19, 1997 in the assembly line "c"
? irf1407s/lpbf 11 2016-5-26 d2-pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to infineon?s web site www.infineon.com 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
? irf1407s/lpbf 12 2016-5-26 ? revision history date comments 4/20/2016 ?? updated datasheet with corporate template. ?? corrected typo on fig. 3 from v ds =15v to v ds = 25v on page 3. ?? corrected typo on fig. 5 from f = 1mhz to 1khz on page 4. ?? updated package outline on pages 9,10. 5/26/2016 ?? added disclaimer on last page. ?? to-262 package was removed from ordering information since it is eol on page 1. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? d2-pak msl1 (per jedec j-std-020d) ?? to-262 n/a rohs compliant yes moisture sensitivity level ? qualification standards can be found at in neon?s ? web ? site? www.in neon.com ?? applicable version of jedec standar d at the time of product release. trademarks ? of ? in neon ? technologies ? ag ? hvic?, ? ipm?, ? pfc?, ? au \ convertir?, ? aurix?, ? c166?, ? canpak?, ? cipos?, ? cipurse?, ? cooldp?, ? coolgan?, ? coolir?, ? coolmos?, ? coolset?, ? coolsic?, ? dave?, ? di \ pol?, ? directfet?, ? drblade?, ? easypim?, ? econobridge?, ? econodual?, ? econopack?, ? econopim?, ? eicedriver?, ? eupec?, ? fcos?, ? ganpowir?, ? hexfet?, ? hitfet?, ? hybridpack?, ? imotion?, ? iram?, ? isoface?, ? isopack?, ? ledrivir?, ? litix?, ? mipaq?, ? modstack?, ? my\ d?, ? novalithic?, ? optiga?, ? op mos?, ? origa?, ? powiraudio?, ? powirstage?, ? primepack?, ? pr imestack?, ? profet?, ? pro \ sil?, ? rasic?, ? real3?, ? smar tlewis ?, ? solid ? flash?, ? spoc?, ? strongirfet?, ? supirbuck?, ? tempfet?,? trenchstop?, ? tricore?, ? uhvic?, ? xhp?, ? xmc? ? ? trademarks ? updated ? november ? 2015 ? ? other ?trademarks ? all ? referenced ? product ? or ? service ? names ? and ? trademarks ? are ? the ? property ? of ? their ? respec ve ? owners. ? ?edi on ? 2016 \ 04 \ 19? published ? by ? in neon ?technologies ?ag ? 81726 ? munich, ? germany ? ?? ? ? 2016 ?in neon ? technologies ?ag.? all ?rights ? reserved. ? ?? do ?you ? have ?a ? ques on ? about ?this ? document? ? email: ? erratum@in neon.com ? ? document ? reference ? ifx1 ? important ? notice ? the ? informa on ?given ?in ?this ?document ?shall ?in ? no ? event ?be ? reg a rd ed ?as ?a ?guarantee ?of ? condi ons ? or ? characteris cs ?? (?bescha ? enheitsgaran e?) ?. ? ?? with ? respect ? to ? any ? examples, ? hints ? or ? any ? typical ? values ? stated ? herein ? and/or ? any ? informa on ? regarding ? the ? applica on ? of ? the ? product, ? in neon ? technologies ? hereby ? disclaims ? any ? and? all ? warran es ? and ? liabili es ? of ? any ? kind, ? including ? without ? lim ita on ? war ran es ? of ? non \ infringement ? of ? intellectual ?property ? rights ?of ?any ? third ?party. ? ?? in ? addi on, ? any ? informa on ? given? in ? this ? document ? is ? subject ? to ? customer?s ? compliance ? with ? its ? obliga ons ? stated ? in ? this ? document ? and? any ? applicable ? legal ? requirements, ? norms ? and ? standards? conce r n ing ? customer?s ? products ? and ? any ? use ? of ? the ? product ? of ? in neon ? technologies ? in ? customer?s ? applica ons. ? ?? the ? data ? contained ? in ? this ? document ? is ? exclusively ? intended ? for ? technically ? trained ? sta? . ? it ? is ? the ? responsibility ?of ? customer?s ? technical ? departments ? to ? evaluate ? the ? suitability ? of ? the ? product ? for ? the ? intended ? applic a on ? and ? the ? completeness ? of ? the ? product ? informa on ? given? in ? this ? document ? with ? respect ?to ?such ? applicaon. ? ?? for ? further ? informa on ? on ? the ? product, ? technology, ? delivery ? terms ? and ? condi ons ? and ? prices ? please ? contact ? your ? nearest ? in neon ? technologies ? o ? ce? ( www.in neon.com ). ? ? ?please ? note ? that ? this ? product ? is ? not ? quali ed ? accordi n g ? to ? the ? ae c ? q100 ? or ? aec ? q101 ? documents ? of ?the ?automo ve ? electronics ? council. ?? warnings ? ?due ? to ? technical ? requirements ? products ? may ? contain ? dangerous ? substances. ? for ? informa on ? on ? the ? types ? in ? ques on ? please ? contact ? your ? nearest ? in neon ? technologies?o ? ce . ?? ? except ? as ? otherwise ? explic itly ? approved ? by ? in neon ? technologies ? in ? a ? wri en ? do cument ? signed ? by ? authorized ? representa ves? of ? in neon ? technologies, ? in neon ? technologies? ? products ? may ? not ? be ? used ? in ? any ? applica ons ? where ? a ? failure ? of ? the ? product ? or ? any ? consequences ? of ? the ? use ? thereof ? can ? reasonably ? be ?expected ?to ?re sult ? in ? personal ? injury. ?? ?? ?? ??

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